impurity band
英 [ɪmˈpjʊərəti bænd]
美 [ɪmˈpjʊrəti bænd]
网络 杂质带
双语例句
- The Realization of Rectangular wave Filter Based on the Photonic Crystals Impurity Band
基于杂质带的光子晶体矩形波形滤波器的实现 - Impurity Band in One-dimensional Photonic Crystal Containing Defect Layers with Negative Refractive Index
含负折射率缺陷的一维光子晶体的杂质带 - The Realization of Photonic Crystals Impurity Band and a Large Separating Angle Beam Splitter
光子晶体矩形波形滤波器和大角度光分束器的实现 - An investigation of the impurity profile of the 4mm band silicon avalanche diode by means of the Schottky barrier characteristics
利用肖特基势垒特性研究4mm波段硅雪崩二极管的杂质分布 - Theory of Conductivity and Impurity Band of n-InSb under Strong Magnetic Field
强磁场下n型InSb杂质带及其电导的理论 - This article briefly introduces the development from impurity engineering to energy band engineering and three methods of energy band engineering.
本文简要介绍从杂质工程到能带工程的发展过程，以及能带工程的三种基本方法。 - The results show that the Cantor set structure of electronic spectra in the almost periodic systems is destroyed in both the disordered cases, but Ihe former may-create new impurity levels in the forbidden band, and the latter mainly broadens the original energy bands.
两种类型的无序都将破坏准周期系统的Cantor集合型的能谱结构，但前者会在原有的禁带处产生杂质能级，后者主要引起原有能带轮廓的展宽。 - Based on the consideration of this device, the paper calculates and discusses the shallow impurity energy level and optical absorption and presents: the impurity band;
本文结合这种器件计算和讨论了超晶格中浅杂质能谱和光吸收，给出了：杂质能带； - Shallow Impurity Energy Band and Optical Absorption in Superlattice
超晶格中浅杂质能带与光吸收 - The Impurity Band Based-on Defects Coupled in One-dimensional Photonic Crystal
一维光子晶体中多缺陷耦合导致的杂质带 - The width of impurity energy band;
杂质离化能； - Problem of electron-phonon coupling in the impurity absorption band ( ii)
杂质中心吸收宽带的电声子耦合问题（Ⅱ） - It is found that when the refractive index of defects is changed, the coupling effect between the defect modes is varied, which results in the change of the impurity band.
计算结果表明，如果改变缺陷的折射率，缺陷模之间的耦合作用将发生改变，使得能隙中的杂质带也随之改变。 - In this paper, the impurity profile of the 4 mm band silicon avalanche diode is studied by means of the characteristics of the Schottky barrier.
本文研究了4mm波段硅雪崩二极管剖面的杂质浓度分布。测量并讨论了研制器件的外延层杂质分布特性，和器件杂质分布及其对器件性能的影响。 - A simple single impurity band spin-fermi lattice model is discussed using Monte Carlo simulations. The density of states and optical conductivity are calculated.
本文的第三部分讨论了单杂质能带自旋-费米格点模型，利用MonteCarlo方法计算了系统的态密度和光学电导。 - Heavy impurity doping makes the conduction and valence bands shift, and brings about the so-called Band Gap Narrowing ( BGN).
重掺杂使导带、价带带边同时发生了收缩，从而产生能带变窄效应（BGN）。 - The GaP_ ( 1-x) N_x alloys display obvious band-gap reduction characteristic, with the PL spectra developing from nitrogen bound excitons and their phonon replicas under low x composition to impurity band emission under high x composition.
GaP1-xNx混晶的PL谱从低组分的NN对束缚激子及其声子伴线到高组分杂质带发光的特征，表现出明显的带隙降低的趋势。 - After calculating the effective refractive index of the structure, we have verified that the impurity band has a normal dispersion.
通过计算结构的有效折射率，证实了杂质带色散是正常色散。 - It is found that the conduction mechanism shifts gradually from conduction ( or valence) band conduction to impurity band conduction with decreasing temperature, and the shifting temperature range becomes higher as the doping concentration increases.
研究发现，随着温度的降低，重掺直拉单晶硅的导电机制会发生转变，逐渐由导带（价带）导电为主转变为杂质带导电为主，并且发生转变的温度范围随着掺杂浓度增大而升高。 - Concurrently, impurity band can increase the density of states at the Fermi level and hence enlarge the Seebeck coefficient.
另外杂质能带可以增加费米能级处的态密度，增大Seebeck系数。 - The defect formation energies, the band structures and the density of states were calculated to analyze the energetic properties and electronic structures of 4d doped TiO2. The doped TiO2 was classified four parts by their characteristic impurity band.
我们计算并详细分析了它们的杂质形成能、能带结构和分态密度，按照杂质带的特性分为四类进行讨论。 - During the transition, electrons in valence band firstly transfer to the impurity level in the low energy range and then to the conduction band, inducing longer wavelength of absorbed photon, redshift of the optical absorption edge, and smaller energy band gap.
价带中的电子发生跃迁时，首先会跃迁到能量相对较低的杂质能级，然后再跃迁到导带，导致吸收光子的波长变长，吸收边红移，光学带隙变小。